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| VRRM = IF = 6500 V 50 A Fast-Diode Die 5SLX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1666-01 July 07 * * * * Fast and soft reverse recovery Low losses Large SOA Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter 1) Symbol VRRM IF IFRM Tvj Conditions Tvj 25 C Limited by Tvjmax min max 6500 50 100 Unit V A A C Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) -40 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter Continuous forward voltage Continuous reverse current Peak reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 2) 2) Symbol VF IR Irr Qrr trr Erec Conditions IF = 50 A VR = 6500 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C IF = 50 A, VR = 3600 V, di/dt = 230 A/s, L = 3400 nH, Inductive load, Switch: 2x 5SMX12M6500 Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min typ 3.2 3.4 20 3 70 80 65 100 1700 2250 100 180 max Unit V V A 6 mA A A C C ns ns mJ mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLX 12M6500 100 90 80 25 C Erec [mJ], Qrr [C], Irr [A] 70 60 IF [A] 50 40 30 20 10 125 C 250 VCC = 3600 V di/dt = 230 A/s Tvj = 125 C L = 3.4 H Erec 200 150 Qrr 100 Irr 50 E rec [mJ] = -1.78 x 10 -2 x I F 2 + 3.8 x I F + 34 0 0 1 2 VF [V] 3 4 5 0 0 10 20 30 40 50 IF [A] 60 70 80 90 100 Fig. 1 Typical diode forward characteristics Fig. 2 Typical reverse recovery characteristics vs. forward current 60 40 20 0 IR -20 -40 -60 -80 -100 0 2000 4000 time [ns] 6000 VR IF [A] VR = 3600 V IF = 50 A di/dt = 230 A/s Tvj = 125 C L = 3.4 H 0 -500 -1000 -1500 -2000 -2500 -3000 -3500 -4000 8000 VF [V] Erec [mJ], Qrr [C], Irr [A] 200 VCC = 3600 V IF = 50 A Tvj = 125 C L = 3.4 H 150 Erec Qrr 100 Irr 50 0 0 50 100 150 200 250 di/dt [A/s] Fig. 3 Typical diode reverse recovery behaviour Fig. 4 Typical reverse recovery vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1666-01 July 07 page 2 of 3 5SLX 12M6500 Mechanical properties Parameter Overall die L x W Dimensions exposed LxW front metal thickness Metallization 3) 3) Unit 13.6 x 13.6 8.58 x 8.58 670 20 AlSi1 Al / Ti / Ni /Ag 4 1.2 mm mm m m m front (A) back (K) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing 13.560.05 8.58 A (Anode) 8.58 13.560.05 Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1666-01 July 07 |
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